Photonic Materials Group - Prof. Albert Polman
List of not text-indexed PDF files of publications (scanned copies)

• 15 minute clips on materials engineering

A. Polman, J. Mater. Education 20, 119 (1998)
• Lattice site and photoluminescence of erbium-implanted Al₂O₃

G.N. van Hoven, A. Polman, E. Alves, M.F. da Silva, A.A. Melo and J.C. Soares, J. Mater. Res. 12, 1401 (1997)
• Optimization of an Er-doped silica glass optical waveguide amplifier

E. Snoeks, G.N. van den Hoven, and A. Polman, IEEE J. Quantum Electron. 32, 1680 (1996)
• Measuring and modifying the spontaneous emission rate of erbium near an interface

E. Snoeks, A. Lagendijk, and A. Polman, Phys. Rev. Lett. 74, 2459 (1995)
• Room temperature light emitting silicon diodes fabricated by erbium ion implantation

G. Franzo, F. Priolo, S. Coffa, A. Polman and A. Carnera, Nucl. Instr. and Meth. B 96, 374 (1995)
• Temperature dependence and quenching processes of the intra-4f luminescence of Er in crystalline Si

S. Coffa, G. France, F. Priolo, A. Polman, and R. Serna, Phys. Rev. B. 49, 16313 (1994)
• Experimental test of theories for heterogeneous freezing kinetics in silicon

P.A. Stolk, A. Polman and W.C. Sinke, Phys. Rev. B 47, 5 (1993) 
• Radiation-enhanced plastic flow of covalent materials during ion irradiation

C.A. Volkert and A. Polman, Mat. Res. Soc. Symp. Proc. 235, 3 (1992)
• Photoluminescence of erbium in amorphous silicon: structural relaxation and optical doping

J.S. Custer, E. Snoeks and A. Polman, Mat. Res. Soc. Symp. Proc. 235, 51 (1992)
• The nature of keV and MeV ion damage in Al_xGa_1-xAs/GaAs and AlAs/GaAs heterostructures

A. Cullis, A. Polman, P. W. Smith, D. C. Jacobson and J. M. Poate, Nucl. Instr. Meth. B 62, 463 (1992) 
• Local structure around Er in silica and sodium-silicate glasses

M.A. Marcus and A. Polman, J. of Non-Cryst. Solids 136, 260 (1991)
• Photoluminescence and structural characterization of MeV erbium implanted silica glass

A. Polman, D.C. Jacobson, A. Lidgard, J.M. Poate and G.W. Arnold, Nucl. Instr. and Meth. B59/60, 1313 (1991)
• Structural relaxation in amorphous silicon and the role of network defects

S. Roorda, J.S. Custer, W.C. Sinke, J.M. Poate, D.C. Jacobson, A. Polman and F. Spaepen, Nucl. Instr. and Meth. B 59/60, 344 (1991)
• Amorphous Si - The role of MeV implantation in elucidating defect and thermodynamic properties

J.M. Poate, S. Coffa, D.C. Jacobson, A. Polman, J.A. Roth, G.L. Olson, S. Roorda, W.C. Sinke, J.S. Custer, M.O. Thompson, F. Spaepen, and E. Donovan, Nucl. Instr. and Meth. B 55, 533 (1991)
• Triggering explosive crystallization of amorphous silicon

A. Polman, S. Roorda, P.A. Stolk and W.C. Sinke, J. Crystal Growth 108, 114 (1991) 
• 1.54 µm room temperature luminescence of MeV erbium implanted silica glass

A. Polman, A. Lidgard, D.C. Jacobson, P.C. Becker, R.C. Kistler, G.E. Blonder and J.M. Poate, Appl. Phys. Lett. 57, 2859 (1990)
• Defect states of amorphous Si probed by the diffusion and solubility of Cu

A. Polman, D.C. Jacobson, S. Coffa, J.M. Poate, S. Roorda and W. C. Sinke, Appl. Phys. Lett. 57, 1230 (1990)
• Pulsed-laser crystallization of amorphous silicon layers buried in a crystalline matrix

A. Polman, P.A. Stolk, D.J.W. Mous, W.C. Sinke, C.W.T. Bulle-Lieuwma and D.E.W. Vandenhoudt, J. Appl. Phys. 67, 4024 (1990)
• Explosive crystallization of amorphous silicon: triggering and propagation

W.C. Sinke, A. Polman, S. Roorda, P.A. Stolk, Appl. Surf. Sci. 43, 128 (1989)
• Epitaxial explosive crystallization of amorphous silicon

A. Polman, D.J.W. Mous, P.A. Stolk, W.C. Sinke, C.W.T. Bulle-Lieuwma and D.E.W. Vandenhoudt, Appl. Phys. Lett. 55, 1097 (1989)
• Pulsed-laser induced transient phase transformations at the Si-H₂O interface

A. Polman, W.C. Sinke, M.J. Uttormark and M.O. Thompson, J. Mater. Res. 4, 843 (1989)
• An MeV facility for materials research

A. Polman, A.M. Vredenberg, W.H. Urbanus, P.J. van Deenen, H. Alberda, H. Krop, I. Attema, E. de Haas, H. Kersten, S. Doorn, J. Derks, J. ter Beek, S. Roorda, R. Schreutelkamp, J.G. Bannenberg and F.W. Saris, Nucl. Instr. Meth. B 37/38, 935 (1989) 
• Quench rate enhancement in pulsed laser melting of Si by processing under water

A. Polman, W.C. Sinke, M.J. Uttormark and M.O. Thompson, Appl. Phys. Lett. 52, 535 (1988)
• Faster quenching by silicon pulsed laser annealing under water

A. Polman, S. Roorda, S.B. Ogale and F.W. Saris, Mat. Res. Soc. Symp. Proc. 74, 129 (MRS, Pittsburgh, 1987)
• Improved short-circuit current of ion-implanted crystalline silicon solar cells

A. Polman, S. Roorda, W. Sinke and F.W. Saris, Proc. 7th Europ. Conf. on Photovoltaic Solar Energy, Sevilla, 1986 (Reidel, Dordrecht, 1987) p. 911
• A comparison between excimer laser and thermal annealing for ion-implanted polycrystalline silicon solar cells

W.C. Sinke, A. Polman and F.W. Saris, Sol. Cells 20, 51 (1987)
• Pulsed laser oxidation and nitridation of metal surfaces immersed in liquid media

S.B. Ogale, A. Polman, F.O.P. Quentin, S. Roorda and F.W. Saris, Appl. Phys. Lett. 50, 138 (1987)
• Time-resolved reflectivity measurements during explosive crystallization of amorphous silicon

J.J.P. Bruines, R.P.M. van Hal, H.M.J. Boots, A. Polman and F.W. Saris, Appl. Phys. Lett. 49, 1160 (1986) 
• A new method for the evaluation of solar cell parameters

A. Polman, W.G.H.J.M. van Sark, W. Sinke and F.W. Saris, Sol. Cells 17, 241 (1986)
• Electron irradiation-activated low-temperature annealing of phosphorous-implanted silicon

M. Miyao, A. Polman, W. Sinke and F.W. Saris, Appl. Phys. Lett. 48, 1132 (1986)
• The use of a pulsed laser for shallow-junction processing

W. Sinke, A. Polman, W.G.H.J.M. van Sark and F.W. Saris, Sixth E.C. Photovoltaic Solar Energy Conference Proceedings (London UK, April 15-19, 1985), 1011 (1985)
• Fluorine mobility in La_1-xBa_xF_3-x (0<x<0.1) studied by nuclear magnetic response

A. F. Aalders, A. Polman, A. F. M. Arts and H. W. de Wijn, Solid State Ionics 9/10, 539 (1983)